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  • image of Single FETs, MOSFETs>AS1M080120P
  • image of Single FETs, MOSFETs>AS1M080120P
AS1M080120P
N-CHANNEL SILICON CARBIDE POWER
AS1M080120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
-
Tube
6592
1
: $11.5100
: 6592

1

$11.5100

$11.5100

10

$10.1400

$101.4000

100

$8.7700

$877.0000

500

$7.9500

$3,975.0000

1000

$7.2900

$7,290.0000

image of Single FETs, MOSFETs>AS1M080120P
image of Single FETs, MOSFETs>AS1M080120P
AS1M080120P
-
Anbon Semiconductor
N-CHANNEL SILIC
-
Tube
6592
YES
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs98mOhm @ 20A, 20V
Power Dissipation (Max)192W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1475 pF @ 1000 V
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