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  • image of Single FETs, MOSFETs>IRFH8316TRPBF-IR
  • image of Single FETs, MOSFETs>IRFH8316TRPBF-IR
IRFH8316TRPBF-IR
IRFH8316 - HEXFET POWER MOSFET
IRFH8316TRPBF-IR
Single FETs, MOSFETs
International Rectifier
IRFH8316 - HEXF
-
Bulk
12760
: $0.3500
: 12760

866

$0.3500

$303.1000

image of Single FETs, MOSFETs>IRFH8316TRPBF-IR
image of Single FETs, MOSFETs>IRFH8316TRPBF-IR
IRFH8316TRPBF-IR
-
International Rectifier
IRFH8316 - HEXF
-
Bulk
12760
NO
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrInternational Rectifier
SeriesHEXFET®
PackageBulk
Product StatusACTIVE
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs2.95mOhm @ 20A, 10V
Power Dissipation (Max)3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id2.2V @ 50µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3610 pF @ 10 V
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