+86-15869849588
STT5100N18P110XPSA1
THYR / DIODE MODULE DK
STT5100N18P110XPSA1
SCR — Модули
IR (Infineon Technologies)
THYR / DIODE MO
-
Поднос
6500
1
: $2,103.6900
: 6500

1

$2,103.6900

$2,103.6900

image of SCR — Модули>STT5100N18P110XPSA1
STT5100N18P110XPSA1
-
IR (Infineon Technologies)
THYR / DIODE MO
-
Поднос
6500
YES
STT5100N18P110XPSA1
意法-ST
N沟道20 V、0.025 Ohm典型值、5 A STripFET(TM) V功率MOSFET,SOT23-6L封装
STT5100N18P110XPSA1
英飞凌-Infineon
110 mm Thyristor/Thyristor Module with 1400 V in pressure contact technology
STT5100N18P110XPSA1
英飞凌-Infineon
Sanftanlauf-Modul Soft Starter Module
STT5100N18P110XPSA1
江苏矽莱克-Sirectifier
Thyristor-Thyristor Modules
STT5100N18P110XPSA1
意法-ST
N-CHANNEL 20V - 0.030 ohm - 5A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET
STT5100N18P110XPSA1
意法-ST
P-CHANNEL 20V - 0.065W - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET
STT5100N18P110XPSA1
岸上-On-Shore
螺钉式接线端子
STT5100N18P110XPSA1
意法-ST
328903
STT5100N18P110XPSA1
英飞凌-Infineon
328908
STT5100N18P110XPSA1
英飞凌-Infineon
328912
STT5100N18P110XPSA1
江苏矽莱克-Sirectifier
328916
STT5100N18P110XPSA1
意法-ST
328919
STT5100N18P110XPSA1
意法-ST
328922
STT5100N18P110XPSA1
岸上-On-Shore
328926
Параметры продукции 
ТИПОПИСАНИЕ
ПроизводительIR (Infineon Technologies)
Ряд-
УпаковкаПоднос
Статус продуктаACTIVE
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